| PART |
Description |
Maker |
| CY7C1336F CY7C1336F-117AC |
2-Mbit (64K x 32) Flow-Through Sync SRAM
|
CYPRESS[Cypress Semiconductor]
|
| CY7C1333F-100AC |
2-Mbit (64K x 32) Flow-through SRAM with NoBL(TM) Architecture
|
Cypress
|
| IDT71V633 IDT71V633S11PF IDT71V633S11PFI |
64K x 32 3.3V Synchronous SRAM Flow-Through Outputs Burst Counter, Single Cycle Deselect 64K X 32 CACHE SRAM, 11 ns, PQFP100
|
Integrated Device Technology, Inc.
|
| CY7C1021CV33-8BAXC CY7C1021CV33-8ZXC CY7C1021CV33- |
1-Mbit (64K x 16) Static RAM 64K X 16 STANDARD SRAM, 10 ns, PDSO44
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1021CV33-12ZXCT |
1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V; 64K X 16 STANDARD SRAM, 12 ns, PDSO44
|
Cypress Semiconductor, Corp.
|
| MCM69F618CTQ12 MCM69F618CTQ12R MCM69F618CTQ10 MCM6 |
64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM 64K X 18 CACHE SRAM, 12 ns, PQFP100
64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM 64K X 18 CACHE SRAM, 9 ns, PQFP100
|
MOTOROLA[Motorola, Inc]
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| CAT64LC20ZS CAT64LC20ZP CAT64LC20J-TE7 CAT64LC20J- |
36-Mbit QDR™-II SRAM 4-Word Burst Architecture
36-Mbit QDR™-II SRAM 2-Word Burst Architecture
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Flow-through SRAM with NoBL™ Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL™ Architecture
SPI Serial EEPROM SPI串行EEPROM
36-Mbit QDR™-II SRAM 2-Word Burst Architecture SPI串行EEPROM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM SPI串行EEPROM
256K (32K x 8) Static RAM SPI串行EEPROM
|
Analog Devices, Inc.
Electronic Theatre Controls, Inc.
|
| CY7C1353G-133AXC CY7C1353G-133AXI CY7C1353G-117AXI |
4-Mbit (256K x 18) Flow-through SRAM with NoBL(TM) Architecture
4-Mbit (256K x 18) Flow-through SRAM with NoBL⑩ Architecture
4-Mbit (256K x 18) Flow-through SRAM with NoBL Architecture
|
CYPRESS[Cypress Semiconductor]
|
| UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
1-Mbit (64K x 16) Static RAM
1M x 4 Static RAM
x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM
4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
| CY14B101KA-SP45XI CY14B101KA-SP25XI |
64K X 16 NON-VOLATILE SRAM, 45 ns, PDSO48
1 Mbit (128K x 8/64K x 16) nvSRAM with Real Time Clock
|
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1481V33-133BZXI CY7C1481V33-133AXI CY7C1481V33 |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM 1M X 72 CACHE SRAM, 6.5 ns, PBGA209
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM 4M X 18 CACHE SRAM, 6.5 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
